Features: ·Dual chip type·Low on-state resistanceN-channel RDS(on)1 = 0.12 TYP. (VGS = 10 V, ID = 0.5 A)RDS(on)2 = 1.19 TYP. (VGS = 4 V, ID = 0.5 A)·P-channel RDS(on)1 = 0.45 TYP. (VGS = -10 V, ID = -0.35 A)RDS(on)2 = 0.74 TYP. (VGS = -4 V, ID = -0.35 A)·Low input capacitanceN-channel Ciss = 180 p...
KPA1790: Features: ·Dual chip type·Low on-state resistanceN-channel RDS(on)1 = 0.12 TYP. (VGS = 10 V, ID = 0.5 A)RDS(on)2 = 1.19 TYP. (VGS = 4 V, ID = 0.5 A)·P-channel RDS(on)1 = 0.45 TYP. (VGS = -10 V, ID =...
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Parameter |
Symbol |
N-Channel |
P-Channel |
Unit |
Drain to Source Voltage(VGS= 0 V) |
VDSS |
60 |
-60 |
V |
Gate to Source Voltage(VGS= 0 V) |
VGSS |
±20 |
±20 |
V |
Drain Current (DC) |
ID(DC) |
±1.0 |
±0.7 |
A |
Drain Current (pulse) *1 |
ID(pulse) |
±4.0 |
±2.8 |
A |
Total Power Dissipation (1 unit) *2 |
PT |
1.7 |
A | |
Total Power Dissipation (2 units) *2 |
PT |
2 |
A | |
Channel Temperature |
Tch |
150 |
||
Storage Temperature |
Tstg |
-55 to +150 |
W | |
Single Avalanche Current *3 |
IAS |
0.5 |
-0.35 |
A |
Single Avalanche Energy *3 |
EAS |
0.02 |
0.01 |
mJ |