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KPA1750

Features: ·Dual MOSFET chips in small package·4V Gate Drive Type and Low On-Resistance RDS(on)1 = 0.09 TYP. (VGS = -10 V, ID = -1.8 A) RDS(on)2 = 0.18 TYP. (VGS = -4 V, ID = -1.8A)·Low Ciss : Ciss = 540 pF TYP.·Built-in G-S protection diode·Small and surface mount packageSpecifications Parame...

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SeekIC No. : 004386577 Detail

KPA1750: Features: ·Dual MOSFET chips in small package·4V Gate Drive Type and Low On-Resistance RDS(on)1 = 0.09 TYP. (VGS = -10 V, ID = -1.8 A) RDS(on)2 = 0.18 TYP. (VGS = -4 V, ID = -1.8A)·Low Ciss : Ciss =...

KPA1750 Data Sheet

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Part Number:
KPA1750
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Dual MOSFET chips in small package
·4V Gate Drive Type and Low On-Resistance
   RDS(on)1 = 0.09 TYP. (VGS = -10 V, ID = -1.8 A)
   RDS(on)2 = 0.18 TYP. (VGS = -4 V, ID = -1.8A)
·Low Ciss : Ciss = 540 pF TYP.
·Built-in G-S protection diode
·Small and surface mount package


Specifications

Parameter Symbol P-channel Unit
Drain-to-Source Voltage VDSS -20 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC)Ta = 25 ID(DC) ±3.5 A
Drain Current (Pulse) *1 ID(pulse) ±14 A
Total Power DissipationTa = 25 *2 PT 1.7 W
Total Power DissipationTa = 25 *2 2.0 W
Channel Temperature Tch 150
Storage Temperature Tstg -55 to +150
*1 PW 10 s, Duty cycle 1 %
*2 Mounted on ceramic substrate of 1200mm2 X1.0 mm


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