Features: Dual chip typeLow on-state resistanceRDS(on)1 = 27 m TYP. (VGS = 10 V, ID = 3.5 A)RDS(on)2 = 32 m TYP. (VGS = 4.5 V, ID = 3.5 A)RDS(on)3 = 34 m TYP. (VGS = 4.0 V, ID = 3.5 A)Low input capacitanceCiss = 1300 pF TYP.Built-in G-S protection diodeSmall and surface mount packageSpecifications...
KPA1764: Features: Dual chip typeLow on-state resistanceRDS(on)1 = 27 m TYP. (VGS = 10 V, ID = 3.5 A)RDS(on)2 = 32 m TYP. (VGS = 4.5 V, ID = 3.5 A)RDS(on)3 = 34 m TYP. (VGS = 4.0 V, ID = 3.5 A)Low input capa...
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Parameter |
Symbol |
Rating |
Unit |
Drain to Source Voltage (VGS = 0) |
VDSS |
60 |
V |
Gate to Source Voltage (VDS = 0) |
VGSS |
±20 |
V |
Drain Current (DC) |
ID(DC) |
±7 |
A |
Drain Current (Pulse) *1 |
ID(pulse) |
±28 |
A |
Total Power Dissipation (1 unit) *2 |
PT |
1.7 |
W |
Total Power Dissipation(2 unit) *2 |
PT |
2.0 |
W |
Channel Temperature |
Tch |
150 |
|
Storage Temperature |
Tstg |
-55 to + 150 |
|
Single Avalanche Current *3 |
IAS |
7 |
A |
Single Avalanche Energy *3 |
EAS |
98 |
mJ |