Features: Low on-state resistanceRDS(on)1 = 12.5 m TYP. (VGS = -10 V, ID = -4 A)RDS(on)2 = 17 m TYP. (VGS = -4.5 V, ID = -4 A)RDS(on)3 = 19 m TYP. (VGS = -4.01 V, ID = -4 A)Low Ciss : Ciss = 2100 pF TYP.Built-in G-S protection diodeSmall and surface mount packageSpecifications Parameter ...
KPA1716: Features: Low on-state resistanceRDS(on)1 = 12.5 m TYP. (VGS = -10 V, ID = -4 A)RDS(on)2 = 17 m TYP. (VGS = -4.5 V, ID = -4 A)RDS(on)3 = 19 m TYP. (VGS = -4.01 V, ID = -4 A)Low Ciss : Ciss = 2100 ...
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Low on-state resistance
RDS(on)1 = 12.5 m TYP. (VGS = -10 V, ID = -4 A)
RDS(on)2 = 17 m TYP. (VGS = -4.5 V, ID = -4 A)
RDS(on)3 = 19 m TYP. (VGS = -4.01 V, ID = -4 A)
Low Ciss : Ciss = 2100 pF TYP.
Built-in G-S protection diode
Small and surface mount package
Parameter |
Symbol |
Rating |
Unit |
Drain to Source Voltage (VGS = 0) |
VDSS |
-30 |
V |
Gate to Source Voltage (VDS = 0) |
VGSS |
±20 |
V |
Drain Current (DC) Ta = 25 |
ID(DC) |
±8 |
V |
Drain Current (Pulse) *1 |
ID(pulse) |
±32 |
mA |
Total Power DissipationTa = 25 *2 |
PT |
2.0 |
mA |
Channel Temperature |
Tch |
150 |
|
Storage Temperature |
Tstg |
-55 to 150 |