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KMB7D1DP30QA

Features: ·VDSS=-30V, ID=-7.1A·Drain-Source ON Resistance RDS(ON) =25m (Max.) @ VGS=-10V RDS(ON) =41m (Max.) @ VGS=-4.5V·Super Hige Dense Cell Design·VDSS=-30V, ID=-7.1A·Drain-Source ON Resistance RDS(ON) =25m (Max.) @ VGS=-10V RDS(ON) =41m (Max.) @ VGS=-4.5V·Super Hige Dense Cell DesignSpecificat...

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KMB7D1DP30QA: Features: ·VDSS=-30V, ID=-7.1A·Drain-Source ON Resistance RDS(ON) =25m (Max.) @ VGS=-10V RDS(ON) =41m (Max.) @ VGS=-4.5V·Super Hige Dense Cell Design·VDSS=-30V, ID=-7.1A·Drain-Source ON Resistance R...

KMB7D1DP30QA Data Sheet

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Part Number:
KMB7D1DP30QA
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

·VDSS=-30V, ID=-7.1A
·Drain-Source ON Resistance RDS(ON) =25m (Max.) @ VGS=-10V RDS(ON) =41m (Max.) @ VGS=-4.5V
·Super Hige Dense Cell Design

·VDSS=-30V, ID=-7.1A
·Drain-Source ON Resistance RDS(ON) =25m (Max.) @ VGS=-10V RDS(ON) =41m (Max.) @ VGS=-4.5V
·Super Hige Dense Cell Design






Specifications

CHARACTERISTIC
SYMBOL
PATING
UNIT
Drain Source Voltage
VDSS
-30
V
Gate Source Voltage
VGSS
±22
V
Drain Current

DC@TA=25
ID*

-7.1
A

DC@TA=70
-5.7
Pulsed
IDP
-40
Drain Source Diode Forward Current
IS
-1.7
A
Drain Power Dissipation
TA=25
PD *
1.1
W
TA=70
0.7
Maximum Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
Thermal Resistance, Junction to Ambient
RthJA*
110
/W
Note : Surface Mounted on FR4 Board, t10sec.




Description

This KMB7D1DP30QA Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.



This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.








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