KMB7D1DP30QA Selling Leads, Price trend, KMB7D1DP30QA DataSheet download, circuit diagram from SeekIC.com

Features: ·VDSS=-30V, ID=-7.1A·Drain-Source ON Resistance RDS(ON) =25m (Max.) @ VGS=-10V RDS(ON) =41m (Max.) @ VGS=-4.5V·Super Hige Dense Cell Design·VDSS=-30V, ID=-7.1A·Drain-Source ON Resistance RDS(ON) =25m (Max.) @ VGS=-10V RDS(ON) =41m (Max.) @ VGS=-4.5V·Super Hige Dense Cell DesignSpecificat...

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SeekIC No. : 004386277 Detail

KMB7D1DP30QA: Features: ·VDSS=-30V, ID=-7.1A·Drain-Source ON Resistance RDS(ON) =25m (Max.) @ VGS=-10V RDS(ON) =41m (Max.) @ VGS=-4.5V·Super Hige Dense Cell Design·VDSS=-30V, ID=-7.1A·Drain-Source ON Resistance R...

KMB7D1DP30QA Data Sheet

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Part Number:: KMB7D1DP30QA
Supply Ability:: 5000

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Upload time: 2024/9/16

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KMB7D0NP30QA evaluate
Features: N-Channel: VDSS=30V, ID=7A.: RDS(ON)=23.5m (Max.) @ VGS=10V: RDS(ON)=39m (Max.) @ VGS=4....
KMB7D0N40QA evaluate
Features: · VDSS=40V, ID=7A.· Drain-Source ON Resistance.RDS(ON)=25m (Max.) @VGS=10VRDS(ON)=45m (M...
KMB7D0DN40QA evaluate
Features: `VDSS=40V, ID=7A.`Drain-Source ON Resistance.`RDS(ON)=25m (Max.) @VGS=10V`RDS(ON)=45m(Ma...

Product Details

Description

Features:

·V_DSS=-30V, I_D=-7.1A
·Drain-Source ON Resistance R_DS(ON) =25m (Max.) @ V_GS=-10V R_DS(ON) =41m (Max.) @ V_GS=-4.5V
·Super Hige Dense Cell Design

·V_DSS=-30V, I_D=-7.1A
·Drain-Source ON Resistance R_DS(ON) =25m (Max.) @ V_GS=-10V R_DS(ON) =41m (Max.) @ V_GS=-4.5V
·Super Hige Dense Cell Design

Specifications

CHARACTERISTIC		SYMBOL	PATING	UNIT
Drain Source Voltage		V_DSS	-30	V
Gate Source Voltage		V_GSS	±22	V
Drain Current	DC@T_A=25	I_D*	-7.1	A
	DC@T_A=70	I_D*	-5.7
	Pulsed	I_DP	-40
Drain Source Diode Forward Current		I_S	-1.7	A
Drain Power Dissipation	T_A=25	P_D *	1.1	W
Drain Power Dissipation	T_A=70	P_D *	0.7	W
Maximum Junction Temperature		T_j	150
Storage Temperature Range		T_stg	-55~150
Thermal Resistance, Junction to Ambient		R_thJA*	110	/W

Note : Surface Mounted on FR4 Board, t10sec.

Description

This KMB7D1DP30QA Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.

This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.

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KMB7D1DP30QA

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