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KMB7D0DN40QA

Features: `VDSS=40V, ID=7A.`Drain-Source ON Resistance.`RDS(ON)=25m (Max.) @VGS=10V`RDS(ON)=45m(Max.) @VGS=4.5V`Super High Dense Cell Design`High Power and Current Handing CapabilityPinoutSpecifications Parameter Symbol Rating Unit Drain to source voltage VDSS 40 V Gate to source ...

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KMB7D0DN40QA: Features: `VDSS=40V, ID=7A.`Drain-Source ON Resistance.`RDS(ON)=25m (Max.) @VGS=10V`RDS(ON)=45m(Max.) @VGS=4.5V`Super High Dense Cell Design`High Power and Current Handing CapabilityPinoutSpecificat...

KMB7D0DN40QA Data Sheet

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Part Number:
KMB7D0DN40QA
Supply Ability:
5000

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Product Details

Description



Features:

`VDSS=40V, ID=7A.
`Drain-Source ON Resistance.
`RDS(ON)=25m (Max.) @VGS=10V
`RDS(ON)=45m(Max.) @VGS=4.5V
`Super High Dense Cell Design
`High Power and Current Handing Capability


Pinout

Connection Diagram


Specifications

Parameter Symbol Rating Unit
Drain to source voltage VDSS 40 V
Gate to source voltage VGSS ±25 V
Drain current DC ID 7 A
Drain Current ID(pulse)(note1) 22 A
Drain Source Diode Forward Current IS 1.7 A
Drain Power Dissipation25 PD * 2 W
Drain Power Dissipation100 PD * 1.44 W
Thermal Resistance, Junction to Ambient
 RthJA*

62.5

 /W
Maximum Junction Temperature TJ -55~150
Storage Temperature Range Tstg -55~150



Description

This KMB7D0DN40QA planer stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for portable equipment and SMPS.




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