KMB7D0N40QA

Features: · VDSS=40V, ID=7A.· Drain-Source ON Resistance.RDS(ON)=25m (Max.) @VGS=10VRDS(ON)=45m (Max.) @VGS=4.5V· Super High Dense Cell Design· High Power and Current Handing CapabilityPinoutSpecifications CHARACTERISTIC SYMBOL PATING UNIT Drain Source VoltageGate Source Voltage VDSSVG...

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KMB7D0N40QA Picture
SeekIC No. : 004386275 Detail

KMB7D0N40QA: Features: · VDSS=40V, ID=7A.· Drain-Source ON Resistance.RDS(ON)=25m (Max.) @VGS=10VRDS(ON)=45m (Max.) @VGS=4.5V· Super High Dense Cell Design· High Power and Current Handing CapabilityPinoutSpecifi...

floor Price/Ceiling Price

Part Number:
KMB7D0N40QA
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

· VDSS=40V, ID=7A.
· Drain-Source ON Resistance.
RDS(ON)=25m (Max.) @VGS=10V
RDS(ON)=45m (Max.) @VGS=4.5V
· Super High Dense Cell Design
· High Power and Current Handing Capability




Pinout

  Connection Diagram


Specifications

CHARACTERISTIC SYMBOL PATING UNIT
Drain Source Voltage

Gate Source Voltage
VDSS

VGSS
40

±25
V

V
Drain Current DC

Pulsed
ID *

IDP
7

22
A

A
Drain Source Diode Forward Current IS 1.7 A
Drain Power Dissipation TA=25

TA=100
PD * 2

1.44
W

W
Maximum Junction Temperature

Storage Temperature Range

Thermal Resistance, Junction to Ambient
Tj

Tstg

RthJA*
-55~150

-55~150

62.5




/W

Note) *Surface Mounted on 1 * 1 FR4 Board.



Description

This KMB7D0N40QA Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in pc, portable equipment and battery powered systems.




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