Features: · VDSS=40V, ID=7A.· Drain-Source ON Resistance.RDS(ON)=25m (Max.) @VGS=10VRDS(ON)=45m (Max.) @VGS=4.5V· Super High Dense Cell Design· High Power and Current Handing CapabilityPinoutSpecifications CHARACTERISTIC SYMBOL PATING UNIT Drain Source VoltageGate Source Voltage VDSSVG...
KMB7D0N40QA: Features: · VDSS=40V, ID=7A.· Drain-Source ON Resistance.RDS(ON)=25m (Max.) @VGS=10VRDS(ON)=45m (Max.) @VGS=4.5V· Super High Dense Cell Design· High Power and Current Handing CapabilityPinoutSpecifi...
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Features: `VDSS=40V, ID=7A.`Drain-Source ON Resistance.`RDS(ON)=25m (Max.) @VGS=10V`RDS(ON)=45m(Ma...
Features: N-Channel: VDSS=30V, ID=7A.: RDS(ON)=23.5m (Max.) @ VGS=10V: RDS(ON)=39m (Max.) @ VGS=4....
Features: ·VDSS=-30V, ID=-7.1A·Drain-Source ON Resistance RDS(ON) =25m (Max.) @ VGS=-10V RDS(ON) =...
· VDSS=40V, ID=7A.
· Drain-Source ON Resistance.
RDS(ON)=25m (Max.) @VGS=10V
RDS(ON)=45m (Max.) @VGS=4.5V
· Super High Dense Cell Design
· High Power and Current Handing Capability
CHARACTERISTIC | SYMBOL | PATING | UNIT | |
Drain Source Voltage Gate Source Voltage |
VDSS VGSS |
40 ±25 |
V V | |
Drain Current | DC Pulsed |
ID * IDP |
7 22 |
A A |
Drain Source Diode Forward Current | IS | 1.7 | A | |
Drain Power Dissipation | TA=25 TA=100 |
PD * | 2 1.44 |
W W |
Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient |
Tj Tstg RthJA* |
-55~150 -55~150 62.5 |
/W |
This KMB7D0N40QA Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for power management in pc, portable equipment and battery powered systems.