KM736V887

The KM736V887 and KM718V987 are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

It is organized as 256K(512K) words of 36(18) bits and integrates address and control registers, a 2-bit burst addres counter and added some new functions for high performance  cache RAM applications; GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous.

Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals.

Burst cycle can be initiated with either the address status processor(ADSP) or address status cache controller(ADSC) inputs. Subsequent burst addresses are generated internally in the system¢s burst sequence and are controlled by the burst address advance(ADV) input.

LBO pin is DC operated and determines burst sequence(linear or interleaved).

ZZ pin controls Power Down State and reduces Stand-by current regardless of CLK.

The KM736V887 and KM718V987 are fabricated using SAMSUNG ¢s high performance CMOS technology and is available in a 100pin TQFP and 119BGA package. Multiple power and ground pins are utilized to minimize ground bounce.