Features: • Synchronous Operation.• 2 Stage Pipelined operation with 4 Burst.• On-Chip Address Counter.• Self-Timed Write Cycle.• On-Chip Address and Control Registers.• VDD = 3.3V-5%/+10% Power Supply• 5V Tolerant Inputs except I/O Pins• Byte Writab...
KM732V589A: Features: • Synchronous Operation.• 2 Stage Pipelined operation with 4 Burst.• On-Chip Address Counter.• Self-Timed Write Cycle.• On-Chip Address and Control Registers....
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: • Synchronous Operation.• 2 Stage Pipelined operation with 4 Burst.• O...
Features: • Synchronous Operation.• 2 Stage Pipelined operation with 4 Burst.• O...
Features: • Synchronous Operation.• 2 Stage Pipelined operation with 4 Burst.• O...
PARAMETER |
SYMBOL |
RATING |
UNIT |
Voltage on VDD Supply Relative to VSS |
VDD |
-0.3 to 4.6 |
V |
Voltage on VDDQ Supply Relative to VSS |
VDDQ |
VDD |
V |
Voltage on Input Pin Relative to VSS |
VIN |
-0.3 to 6.0 |
V |
Voltage on I/O Pin Relative to VSS |
VIO |
-0.3 to VDDQ+0.5 |
V |
Power Dissipation |
PD |
1.2 |
W |
Storage Temperature |
TSTG |
-65 to 150 |
|
Operating Temperature |
TOPR |
0 to 70 |
|
Storage Temperature Range Under Bias |
TBIAS |
-10 to 85 |
The KM732V589A/L is a 1,048,576-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
It is organized as 32K words of 32bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache RAM applications; GW, BW, LBO, ZZ.
Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performedby the combination of WEx and BW when GW is high. And with CS1 high, ADSP disable to support address pipelining.
Burst cycle can be initiated with either the address status processor( ADSP) or address status cache controller(ADSC) inputs. Subsequent burst addresses are generated internally in the system¢s burst sequence and are controlled by the burst address advance(ADV) input.
LBO pin is DC operated and determines burst sequence(linear or interleaved).
ZZ pin controls Power Down State and reduces Stand-by current regardless of CLK.
The KM732V589A/L is fabricated using SAMSUNG¢s high perf ormance CMOS technology and is available in a 100pin QFP/ TQFP package. Multiple power and ground pins are utilized to minimize ground bounce.