Features: • Synchronous Operation.• On-Chip Address Counter.• Write Self-Timed Cycle.• On-Chip Address and Control Registers.• VDD= 3.3V+0.3V/-0.165V Power Supply. • VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O. • 5V...
KM736V687A: Features: • Synchronous Operation.• On-Chip Address Counter.• Write Self-Timed Cycle.• On-Chip Address and Control Registers.• VDD= 3.3V+0.3V/-0.165V Power Supply. R...
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Features: • Synchronous Operation.• 2 Stage Pipelined operation with 4 Burst.• O...
Features: • Synchronous Operation.• 2 Stage Pipelined operation with 4 Burst.• O...
Features: • Synchronous Operation.• 2 Stage Pipelined operation with 4 Burst.• O...
PARAMETER |
SYMBOL |
RATING |
UNIT |
Voltage on VDD Supply Relative to VSS |
VDD |
-0.3 to 4.6 |
V |
Voltage on VDDQ Supply Relative to VSS |
VDDQ |
VDD |
V |
Voltage on Input Pin Relative to VSS |
VIN |
-0.3 to 6.0 |
V |
Voltage on I/O Pin Relative to VSS |
VIO |
-0.3 to VDDQ+0.5 |
V |
Power Dissipation |
PD |
1.2 |
W |
Storage Temperature |
TSTG |
-65 to 150 |
|
Operating Temperature |
TOPR |
0 to 70 |
|
Storage Temperature Range Under Bias |
TBIAS |
-10 to 85 |
The KM736V687A is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system. And with CS1 high, ADSP is blocked to control signals.
It can be organized as 64K words of 36 bits. And it integrates address and control registers, a 2-bit burst address counter and high output drive circuitry onto a single integrated circuit for reduced components counts implementation of high performance cache RAM applications.
Write cycles are internally self-timed and synchronous.
The self-timed write feature eliminates complex off chip write pulse shaping logic, simplifying the cache design and further reducing the component count.
Burst cycle can be initiated with either the address status processor(ADSP) or address status cache controller(ADSC) inputs. Subsequent burst addresses are generated internally in the system¢s burst sequence and are controlled by the burst address advance(ADV) input.
ZZ pin controls Power Down State and reduces Stand-by current regardless of CLK.
The KM736V687A is implemented with SAMSUNG¢s high performance CMOS technology and is available in a 100pin TQFP package. Multiple power and ground pins are utilized to minimize ground bounce.