KM736V687

The KM736V687 is 2,359,296 bits Synchronous Static Random Access Memory designed to support zero wait state performance for advanced Pentium/Power PC based system. And with CS1 high, ADSP is blocked to control signals.

KM736V687 can be organized as 64K words of 36 bits. And it integrates address and control registers, a 2-bit burst address counter and high output drive circuitry onto a single integrated circuit for reduced components counts implementation of high performance cache RAM applications.

Write cycles are internally self-timed and synchronous.

The self-timed write feature eliminates complex off chip write pulse shaping logic, simplifying the cache design and further reducing the component count.

Burst cycle can be initiated with either the address status processor(ADSP) or address status cache controller(ADSC) inputs. Subsequent burst addresses are generated internally in the system¢s burst sequence and are controlled by the burst address advance(ADV) input.

ZZ pin controls Power Down State and reduces Stand-by current regardless of CLK.

The KM736V687 is implemented with SAMSUNG¢s high performance CMOS technology and is available in a 100pin TQFP package. Multiple power and ground pins are utilized to m nimize ground bounce.