KM736FV4021

The KM736FV4021 and KM718FV4021 are 4,718,592 bit Synchronous Pipeline Mode SRAM. It is organized as 131,072words of 36 bits(or 262, 144 words of 18 bits)and is implemented in SAMSUNG¢s advanced CMOS technology.

Single differential PECL level K clocks are used to initiate the read/write operation and all internal operations are self-timed. At the rising edge of K clock, All addresses, Write Enables, Synchronous Select and Data Ins are registered internally. Data outs are updated from output registers edge of the next rising edge of the K clock. An internal write data buffer allows write data to follow one cycle after addresses and controls. The package is 119(7x17) Ball Grid Array with balls on a 1.27mm pitch.