Features: • 128Kx36 or 256Kx18 Organizations.• 3.3V Core Power Supply.• LVTTL Input and Output Levels.• Differential, PECL Clock Inputs K, K.• Synchronous Read and Write Operation• Registered Input and Registered Output• Internal Pipeline Latches to Suppor...
KM736FV4021: Features: • 128Kx36 or 256Kx18 Organizations.• 3.3V Core Power Supply.• LVTTL Input and Output Levels.• Differential, PECL Clock Inputs K, K.• Synchronous Read and Writ...
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Features: • Synchronous Operation.• 2 Stage Pipelined operation with 4 Burst.• O...
Features: • Synchronous Operation.• 2 Stage Pipelined operation with 4 Burst.• O...
Features: • Synchronous Operation.• 2 Stage Pipelined operation with 4 Burst.• O...
PARAMETER |
SYMBOL |
RATING |
UNIT |
Note |
Core Supply Voltage Relative to VSS |
VDD |
-0.5 to 3.9 |
V |
|
Output Supply Voltage Relative to VSS |
VDDQ |
VDD |
V |
|
Voltage on any I/O pin Relative to VSS |
VTERM |
-0.5 to VDD+0.5 |
V |
|
Maximum Power Dissipation |
PD |
3 |
W |
|
Output Short-Circuit Current |
IOUT |
25 |
mA |
|
Operating Temperature |
TOPR |
0 to 70 |
||
Storage Temperature |
TSTG |
-55 to 125 |
The KM736FV4021 and KM718FV4021 are 4,718,592 bit Synchronous Pipeline Mode SRAM. It is organized as 131,072words of 36 bits(or 262, 144 words of 18 bits)and is implemented in SAMSUNG¢s advanced CMOS technology.
Single differential PECL level K clocks are used to initiate the read/write operation and all internal operations are self-timed. At the rising edge of K clock, All addresses, Write Enables, Synchronous Select and Data Ins are registered internally. Data outs are updated from output registers edge of the next rising edge of the K clock. An internal write data buffer allows write data to follow one cycle after addresses and controls. The package is 119(7x17) Ball Grid Array with balls on a 1.27mm pitch.