Features: • Fast Access Time 12,15,20ns(Max.)• Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 2.0mA(Max.) 0.5mA(Max.) L-ver. onlyOperating KM68V257E - 12 : 70mA(Max.) KM68V257E - 15 : 70mA(Max.) KM68V257E - 20 : 70mA(Max.)• Single 3.3 ±0.3V Power Supply• TTL Comp...
KM68V257E: Features: • Fast Access Time 12,15,20ns(Max.)• Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 2.0mA(Max.) 0.5mA(Max.) L-ver. onlyOperating KM68V257E - 12 : 70mA(Max.) KM68V257...
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SpecificationsDescriptionThe KM681000BLG-7L is designed as one kind of 128K x 8 bit low power CMOS...
Parameter |
Symbol |
Value |
Unit | |
Voltage on Any Pin Relative to VSS |
VIN, VOUT |
-0.5 to 4.6 |
V | |
Voltage on VCC Supply Relative to VSS |
VCC |
-0.5 to 4.6 |
V | |
Power Dissipation |
PD |
1.0 |
W | |
Storage Temperature |
TSTG |
-65 to 150 |
°C | |
Operating Temperature | Commercial |
TA |
0 to 70 |
°C |
Industrial |
TA |
-40 to 85 |
°C |
The KM68V257E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The KM68V257E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM68V257E is packaged in a 300mil 28-pin plastic SOJ or TSOP1 forward.