Features: • Fast Access Time 15, 17ns(Max.)• Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) : 0.1mA(Max.) Operating KM68V257C - 15 : 90mA(Max.) KM68V257C - 17 : 80mA(Max.)• Single 3.3±0.3V Power Supply• TTL Compatible Inputs and Outputs• Fully Static Operatio...
KM68V257C: Features: • Fast Access Time 15, 17ns(Max.)• Low Power Dissipation Standby (TTL) : 30mA(Max.) (CMOS) : 0.1mA(Max.) Operating KM68V257C - 15 : 90mA(Max.) KM68V257C - 17 : 80mA(Max.)•...
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SpecificationsDescriptionThe KM681000BLG-7L is designed as one kind of 128K x 8 bit low power CMOS...
Parameter | Symbol | Rating | Unit |
Voltage on Any Pin Relative to VSS | VIN,VOUT | -0.5 to 4.6 | V |
Voltage on VCC Supply Relative to VSS | VCC | -0.5 to 4.6 | V |
Power Dissipation | PD | 1.0 | W |
Storage Temperature | TSTG | -65 to 150 | °C |
Operating Temperature | TA | 0 to 70 | °C |
The KM68V257C is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The KM68V257C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM68V257C is packaged in a 300mil 28-pin plastic SOJ or TSOP1 forward.