PinoutDescriptionThe KM68U1000BLTE-10L is designed as one kind of 128K x8 bit low power and low voltage CMOS static RAM that is fabricated by SAMSUNG's advanced CMOS process technology. The KM68U1000BLTE-10L features are as follows:(1)process technology: poly load; (2)organization: 128 Kx8; (3)pow...
KM68U1000BLTE-10L: PinoutDescriptionThe KM68U1000BLTE-10L is designed as one kind of 128K x8 bit low power and low voltage CMOS static RAM that is fabricated by SAMSUNG's advanced CMOS process technology. The KM68U100...
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SpecificationsDescriptionThe KM681000BLG-7L is designed as one kind of 128K x 8 bit low power CMOS...
The KM68U1000BLTE-10L is designed as one kind of 128K x8 bit low power and low voltage CMOS static RAM that is fabricated by SAMSUNG's advanced CMOS process technology. The KM68U1000BLTE-10L features are as follows:(1)process technology: poly load; (2)organization: 128 Kx8; (3)power supply voltage: KM68V1000B family is 3.0 to 3.6 V and KM68U1000B family is 2.7 to 3.3 V; (4)low data retention voltage: 2V(Min); (5)three state output and TTL compatible; (6)package type: 32-SOP, 32-TSOP1-0820F/R.
The absolute maximum ratings of the KM68U1000BLTE-10L can be summarized as:(1)Voltage on any pin relative to Vss: -0.5 to VCC+0.5 V;(2)Voltage on Vcc supply relative to Vss: -0.3 to 4.6 V;(3)Power Dissipation: 0.7 W;(4)Storage temperature: -65 to 150 °C;(5)Operating Temperature: -25 to 85 °C;(6)Soldering temperature and time: 260°C, 10sec (Lead Only). If you want to know more information about the KM68U1000BLTE-10L, please download the datasheet in www.seekic.com or www.chinaicmart.com .