KM68512B

Features: · Process Technology : 0.4 mm CMOS· Organization : 64Kx8· Power Supply Voltage : Single 5V ±10%· Low Data Retention Voltage : 2V(Min)· Three state output and TTL Compatible· Package Type : 32-TSOP I -0820FPinoutSpecifications Item Symbol Ratings Unit Remark Voltage on any p...

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KM68512B Picture
SeekIC No. : 004386174 Detail

KM68512B: Features: · Process Technology : 0.4 mm CMOS· Organization : 64Kx8· Power Supply Voltage : Single 5V ±10%· Low Data Retention Voltage : 2V(Min)· Three state output and TTL Compatible· Package Type :...

floor Price/Ceiling Price

Part Number:
KM68512B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/19

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Product Details

Description



Features:

· Process Technology : 0.4 mm CMOS
· Organization : 64Kx8
· Power Supply Voltage : Single 5V ±10%
· Low Data Retention Voltage : 2V(Min)
· Three state output and TTL Compatible
· Package Type : 32-TSOP I -0820F



Pinout

  Connection Diagram


Specifications

Item Symbol Ratings Unit Remark
Voltage on any pin relative to Vss VIN,VOUT -0.5 to 7.0 V -
Voltage on Vcc supply relative to Vss VCC -0.5 to 7.0 V -
Power Dissipation PD 1.0 W -
Storage temperature TSTG -65 to 150 -
Operating Temperature TA 0 to 70 KM684000BL/L-L
-40 to 85 KM684000BLI/LI-L
Soldering temperature and time TSOLDER 260°C, 10sec(Lead Only) - -

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the evice. Functional oper ation should be restricted to recommended operating condition.  Exposure to absolute maximum rating conditions for extended eriods may affect reliability.




Description

 The KM68512B family is fabricated by SAMSUNG ¢s advanced CMOS process technology. The KM68512B family support various operat-ing temperature ranges and small package type for user flexi-bility of system design. The KM68512B family also support low data retention voltage for battery back-up operation with low data retention current.




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