KM684000LI

The KM684000LI is a 4,194,304-bit high-speed static random access memory organized as 524, 288 words by 8 bits. The device is fabricated using Samsung's advanced CMOS process. The KM684000LI/LI-L has an output enable input for precise control of the data outputs. It also has chip enable inputs for the minimum current power down made The KM684000LI/LI-L has been designed for high speed and low power applications. It is particularly well suited for battery backup nonvolatile memory application.

The features of KM684000LI can be summarized as (1)fast access time : 70,85,100ns(MAX); (2)low power dissipation; (3)standby (CMOS): 1 1 mW(Typ.) 1.1W(Typ.) L-Version, 275W(Typ.) LL-Version; (4)operating: 137.5mW(Max.); (5)single 5V±10% power supply; (6)wide temperature operatint: -40°C~85°C; (7)TTL Compatible inputs and outputs ; (8)Three State Output; (9)low data retention voitage:2V(Min); (10)standard pin configuration: KM684000LGI / LGI-L: 32-SOP-525, KM684000LTI/LTI-L:32-TSOP2-400F, KM68400QLRl /LRI-L: 32-TSOP2-400R.

The absolute maximum ratings of KM684000LI are (1)voltage on any pin relative to VSS VIN, VOUT: -0.5 to 7.0V; (2)voltage on VCC supply relative to VSS, VCC: -0.5 to 7.0V; (3)power dissipation PD: 1.0W; (4)storage temperature TSTG:-55 to 150°C ; (5)operating temperature TA: -40 to 85°C.(Stresses greater than those listed under "ABSOLUTE MAXIMUM RATINGS" may cause permanent damage to the KM684000LI. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. )