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KM684000B

Features: · Process Technology: TFT· Organization: 512Kx8· Power Supply Voltage: 4.5~5.5V · Low Data Retention Voltage: 2V(Min)· Three state output and TTL Compatible· Package Type: 32-DIP-600, 32-SOP-525 32-TSOP2-400F/RPinoutSpecifications Item Symbol Ratings Unit Remark Voltage on ...

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SeekIC No. : 004386167 Detail

KM684000B: Features: · Process Technology: TFT· Organization: 512Kx8· Power Supply Voltage: 4.5~5.5V · Low Data Retention Voltage: 2V(Min)· Three state output and TTL Compatible· Package Type: 32-DIP-600, 32-S...

KM684000B Data Sheet

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Part Number:
KM684000B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· Process Technology: TFT
· Organization: 512Kx8
· Power Supply Voltage: 4.5~5.5V
· Low Data Retention Voltage: 2V(Min)
· Three state output and TTL Compatible
· Package Type: 32-DIP-600, 32-SOP-525
                            32-TSOP2-400F/R


Pinout

Connection Diagram


Specifications

Item Symbol Ratings Unit Remark
Voltage on any pin relative to Vss VIN,VOUT -0.5 to 7.0 V -
Voltage on Vcc supply relative to Vss VCC -0.5 to 7.0 V -
Power Dissipation PD 1.0 W -
Storage temperature TSTG -65 to 150 -
Operating Temperature TA 0 to 70 KM684000BL/L-L
-40 to 85 KM684000BLI/LI-L
Soldering temperature and time TSOLDER 260°C, 10sec(Lead Only) - -

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the  evice. Functional operation should be restricted to recommended operating condition.  Exposure to absolute maximum rating conditions for extended eriods may affect reliability.




Description

 The KM684000B families are fabricated by SAMSUNG¢s advanced CMOS process technology. The KM684000B families support various operating temperature ranges and various package types for user flexibility of system design. The KM684000B family also support low data retention voltage for battery back-up oper-ation with low data retention current.




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