Features: • Fast Access Time 10, 12, 15ns(Max.)• Low Power Dissipation Standby (TTL) : 20mA(Max.)(CMOS) : 2mA(Max.) Operating KM68257E - 10 : 80mA(Max.) KM68257E - 12 : 80mA(Max.) KM68257E - 15 : 80mA(Max.)• Single 5.0V±10% Power Supply• TTL Compatible Inputs and Outputs...
KM68257EI: Features: • Fast Access Time 10, 12, 15ns(Max.)• Low Power Dissipation Standby (TTL) : 20mA(Max.)(CMOS) : 2mA(Max.) Operating KM68257E - 10 : 80mA(Max.) KM68257E - 12 : 80mA(Max.) KM6825...
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SpecificationsDescriptionThe KM681000BLG-7L is designed as one kind of 128K x 8 bit low power CMOS...
Parameter | Symbol | Rating | Unit | |
Voltage on Any Pin Relative to VSS | VIN, VOUT | -0.5 to 7.0 | V | |
Voltage on VCC Supply Relative to VSS | VCC | -0.5 to 7.0 | V | |
Power Dissipation | PD | 1.0 | W | |
Storage Temperature | TSTG | -65 to 150 | ||
Operating Temperature | Commercial | TA | 0 to 70 | |
Industrial | TA | -40 to 85 |
The KM68257E is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The KM68257E uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The KM68257E is fabricated using SAMSUNG¢s advanced CMOS process and designed for high-speed circuit technology. The KM68257E is particularly well suited for use in high-density high-speed system applications. The KM68257E is packaged in a 300mil 28-pin plastic SOJ or TSOP1 forward.