Features: `Fast Access Time 12, 15, 20``(Max.)`Low Power DissipationStandby (TTL) : 40``(Max.) (CMOS) : 2``(Max.) 0.1``(Max.)- L-ver. onlyOperating KM68257C/CL - 12 : 165``(Max.)KM68257C/CL - 15 : 150``(Max.)KM68257C/CL - 20 : 140``(Max.)`Single 5.0V±10% Power Supply`TTL Compatible I...
KM68257CL: Features: `Fast Access Time 12, 15, 20``(Max.)`Low Power DissipationStandby (TTL) : 40``(Max.) (CMOS) : 2``(Max.) 0.1``(Max.)- L-ver. onlyOperating KM68257C/CL - 12 : 165``(Max.)KM6825...
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SpecificationsDescriptionThe KM681000BLG-7L is designed as one kind of 128K x 8 bit low power CMOS...
Parameter | Symbol | Rating | Unit |
Voltage on Any Pin Relative to VSS | VIN, VOUT | -0.5 to 7.0 | V |
Voltage on VCC Supply Relative to VSS | VCC | -0.5 to 7.0 | V |
Power Dissipation | PD | 1.0 | W |
Storage Temperature | TSTG | -65 to 150 | |
Operating Temperature | TA | 0 to 70 |
The KM68257C is a 262,144-bit high-speed Static Random Access Memory organized as 32,768 words by 8 bits. The KM68257C uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The KM68257CL is fabricated using SAMSUNG's advanced CMOS process and designed for high-speed circuit technology. The KM68257CL is particularly well suited for use in high-density high-speed system applications. The KM68257C is packaged in a 300 mil 28-pin plastic DIP, SOJ or TSOP1 forward.