KM681002BI

Features:

*  Fast Access Time 8,10,12ns(Max.)
*  Low Power Dissipation
    Standby (TTL)      : 50mA(Max.)
                  (CMOS)  : 10mA(Max.)
   Operating KM681002B - 8   : 160mA(Max.)
                    KM681002B - 10 : 155mA(Max.)
                    KM681002B - 12 : 150mA(Max.)
*  Single 5.0V ±10% Power Supply
*  TTL Compatible Inputs and Outputs
*  I/O Compatible with 3.3V Device
*  Fully Static Operation
   - No Clock or Refresh required
*  Three State Outputs
*  Center Power/Ground Pin Configuration
*  Standard Pin Configuration
                    KM681002BJ : 32-SOJ-400
                    KM681002BT: 32-TSOP2-400F


Pinout




Specifications

Parameter		Symbol	Rating	Unit
Voltage on Any Pin Relative to V SS		VIN, VOUT	-0.5 to 7.0	V
Voltage on V CC Supply Relative to V SS		VCC	-0.5 to 7.0	V
Power Dissipation		PD	1	W
Storage Temperature		TSTG	-65 to 150
Operating Temperature	Commercial	TA	0 to 70
	Industrial	TA	-40 to 85

Description

The KM681002B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The KM681002B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The KM681002BI is fabricated using Samsung 's advanced CMOS process and designed for high-speed circuit technology. The KM681002BI  is particularly well suited for use in high-density high-speed system applications. The KM681002B is packaged in a 400mil 32-pin plastic SOJ or TSOP2 forward.