Features: • Fast Access Time 15, 20ns(Max.)• Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.)• Operating KM681001B - 15 : 125mA(Max.) KM681001B - 20 : 123mA(Max.)• Single 5.0V±10% Power Supply• TTL Compatible Inputs and Outputs• Fully Static O...
KM681001B: Features: • Fast Access Time 15, 20ns(Max.)• Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.)• Operating KM681001B - 15 : 125mA(Max.) KM681001B - 20 : 123mA(Max....
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SpecificationsDescriptionThe KM681000BLG-7L is designed as one kind of 128K x 8 bit low power CMOS...
Parameter | Symbol | Rating | Unit |
Voltage on any pin relative to VSS | VIN, VOUT | -0.5 to 7.0 | V |
Voltage on VCC supply relative to VSS | VCC | -0.5 to 7.0 | V |
Storage temperature | TSTG | -65 to 150 | °C |
Power dissipation | PD | 1.0 | W |
Operating Temperature | TA | 0 to 70 | mA |
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
The KM681001B is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words by 8 bits. The KM681001B uses 8 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using Samsung¢s advanced CMOS process and designed for high-speed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The KM681001B is packaged in a 400/300 mil 32-pin plastic SOJ.