PinoutDescriptionThe K9F4G08UOA-PCBO is a kind of 4G-bit NAND Flash Memory with spare 128M-bit and the NAND cell can offer the most costeffective solution for the solid state application market. A program operation can be performed in typical 200s on the (2K+64)Byte page and an erase operation can...
K9F4G08UOA-PCBO: PinoutDescriptionThe K9F4G08UOA-PCBO is a kind of 4G-bit NAND Flash Memory with spare 128M-bit and the NAND cell can offer the most costeffective solution for the solid state application market. A p...
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Features: · Voltage Supply: 3.0V~5.5V· Organization - Memory Cell Array : 512K x 8 bit - Data Regi...
Features: · Voltage Supply: 3.0V~5.5V· Organization - Memory Cell Array : 512K x 8 bit - Data Regi...
DescriptionThe K9F4G08U0A-PCB0 is one member of the K9F4G08U0A which is designed as the 4G-bit NAN...
The K9F4G08UOA-PCBO is a kind of 4G-bit NAND Flash Memory with spare 128M-bit and the NAND cell can offer the most costeffective solution for the solid state application market. A program operation can be performed in typical 200s on the (2K+64)Byte page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out at 25ns cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as command input.
Features of the K9F4G08UOA-PCBO are:(1) fast write cycle time;(2) automatic program and erase;(3) unique ID for copyright protection;(4) inteligent copy-back with internal 1 bit/528 byte;(5) command register operation;(6) hardware data protection;(7) reliable CMOS floating-gate technology.
The absolute maximum ratings of the K9F4G08UOA-PCBO can be summarized as:(1): voltage on any pin relative to VSS is -0.6 V to +4.6 V(Vcc,Vin) or is -0.6 V to Vcc+0.3(<4.6V)(Vcc);(2): short circuit current(IOS) is 5 mA;(3): temperature under bias(Tbias) is -10 to +125; (4): storage temperature(Tstg) is -40 to +125.