K9F4008W0A-TCB0

Features: · Voltage Supply: 3.0V~5.5V· Organization - Memory Cell Array : 512K x 8 bit - Data Register : 32 x 8 bit· Automatic Program and Erase (Typical) - Frame Program : 32 Byte in 500ms - Block Erase : 4K Byte in 6ms· 32-Byte Frame Read Operation - Random Access : 15ms(Max.) - Serial Frame Acc...

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K9F4008W0A-TCB0 Picture
SeekIC No. : 004383437 Detail

K9F4008W0A-TCB0: Features: · Voltage Supply: 3.0V~5.5V· Organization - Memory Cell Array : 512K x 8 bit - Data Register : 32 x 8 bit· Automatic Program and Erase (Typical) - Frame Program : 32 Byte in 500ms - Block ...

floor Price/Ceiling Price

Part Number:
K9F4008W0A-TCB0
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Description



Features:

· Voltage Supply: 3.0V~5.5V
· Organization
   - Memory Cell Array : 512K x 8 bit
   - Data Register : 32 x 8 bit
· Automatic Program and Erase (Typical)
   - Frame Program : 32 Byte in 500ms
   - Block Erase : 4K Byte in 6ms
· 32-Byte Frame Read Operation
   - Random Access : 15ms(Max.)
   - Serial Frame Access : 120ns(Min.)
· Command/Address/Data Multiplexed I/O port
· Low Operation Current (Typical)
   - 10mA Standby Current
   - 10mA Read/ Program/Erase Current
· Reliable CMOS Floating-Gate Technology
   - Endurance : 100K Program/Erase Cycles
· Package
   - 44(40) - Lead TSOP Type II (400mil / 0.8 mm pitch)



Pinout

  Connection Diagram


Specifications

Parameter Symbol Rating Unit
Voltage on any pin relative to VSS VIN -0.6 to +7.0 V
Temperature Under Bias K9F1608W0A-TCB0 TBIAS -10 to +125 °C
K9F1608W0A-TIB0 -40 to +125
Storage Temperature TSTG -65 to +150 °C



Description

The K9F4008W0A-TCB0 is a 512Kx8bit NAND Flash Memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recording. A Program operation programs a 32-byte frame in typical 500ms and an Erase operation erase a 4K-byte block in typical 6ms. Data in a frame can be read out at a burst cycle rate of 120ns/byte. The I/O pins serve as the ports for address and data input/output as well as for command inputs. The on-chip write controller K9F4008W0A-TCB0 automates the program and erase operations, including program or erase pulse repetition where required, and performs internal verification of cell data.

The K9F4008W0A-TCB0 is an optimum solution for flash memory application that do not require the high performance levels or capacity of larger density flash memories. These application include data storage in digital Telephone Answering Devices(TAD) and other consumer applications that require voice data storage.




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