Features: · Voltage Supply: 3.0V~5.5V· Organization - Memory Cell Array : 512K x 8 bit - Data Register : 32 x 8 bit· Automatic Program and Erase (Typical) - Frame Program : 32 Byte in 500ms - Block Erase : 4K Byte in 6ms· 32-Byte Frame Read Operation - Random Access : 15ms(Max.) - Serial Frame Acc...
K9F4008W0A-TCB0: Features: · Voltage Supply: 3.0V~5.5V· Organization - Memory Cell Array : 512K x 8 bit - Data Register : 32 x 8 bit· Automatic Program and Erase (Typical) - Frame Program : 32 Byte in 500ms - Block ...
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Features: · Voltage Supply: 3.0V~5.5V· Organization - Memory Cell Array : 512K x 8 bit - Data Regi...
DescriptionThe K9F4G08U0A-PCB0 is one member of the K9F4G08U0A which is designed as the 4G-bit NAN...
DescriptionThe K9F4G08U0A-PIB0 is one member of the K9F4G08U0A which is designed as the 4G-bit NAN...
Parameter | Symbol | Rating | Unit | |
Voltage on any pin relative to VSS | VIN | -0.6 to +7.0 | V | |
Temperature Under Bias | K9F1608W0A-TCB0 | TBIAS | -10 to +125 | °C |
K9F1608W0A-TIB0 | -40 to +125 | |||
Storage Temperature | TSTG | -65 to +150 | °C |
The K9F4008W0A-TCB0 is a 512Kx8bit NAND Flash Memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recording. A Program operation programs a 32-byte frame in typical 500ms and an Erase operation erase a 4K-byte block in typical 6ms. Data in a frame can be read out at a burst cycle rate of 120ns/byte. The I/O pins serve as the ports for address and data input/output as well as for command inputs. The on-chip write controller K9F4008W0A-TCB0 automates the program and erase operations, including program or erase pulse repetition where required, and performs internal verification of cell data.
The K9F4008W0A-TCB0 is an optimum solution for flash memory application that do not require the high performance levels or capacity of larger density flash memories. These application include data storage in digital Telephone Answering Devices(TAD) and other consumer applications that require voice data storage.