Features: · Voltage Supply: 3.0V~5.5V· Organization - Memory Cell Array : 512K x 8 bit - Data Register : 32 x 8 bit· Automatic Program and Erase (Typical) - Frame Program : 32 Byte in 500ms - Block Erase : 4K Byte in 6ms· 32-Byte Frame Read Operation - Random Access : 15ms(Max.) - Serial Frame Acc...
K9F4008W0A-TIB0: Features: · Voltage Supply: 3.0V~5.5V· Organization - Memory Cell Array : 512K x 8 bit - Data Register : 32 x 8 bit· Automatic Program and Erase (Typical) - Frame Program : 32 Byte in 500ms - Block ...
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Features: · Voltage Supply: 3.0V~5.5V· Organization - Memory Cell Array : 512K x 8 bit - Data Regi...
DescriptionThe K9F4G08U0A-PCB0 is one member of the K9F4G08U0A which is designed as the 4G-bit NAN...
DescriptionThe K9F4G08U0A-PIB0 is one member of the K9F4G08U0A which is designed as the 4G-bit NAN...
Parameter | Symbol | Rating | Unit | |
Voltage on any pin relative to VSS | VIN | -0.6 to +7.0 | V | |
Temperature Under Bias | K9F1608W0A-TCB0 | TBIAS | -10 to +125 | °C |
K9F1608W0A-TIB0 | -40 to +125 | |||
Storage Temperature | TSTG | -65 to +150 | °C |
The K9F4008W0A-TIB0 is a 512Kx8bit NAND Flash Memory. Its NAND cell structure provides the most cost-effective solution for Digital Audio Recording. A Program operation programs a 32-byte frame in typical 500ms and an Erase operation erase a 4K-byte block in typical 6ms. Data in a frame can be read out at a burst cycle rate of 120ns/byte. The I/O pins serve as the ports for address and data input/output as well as for command inputs. The on-chip write controller automates the program and erase operations, including program or erase pulse repetition where required, and performs internal verification of cell data.
The K9F4008W0A-TIB0 is an optimum solution for flash memory application that do not require the high performance levels or capacity of larger density flash memories. These application of K9F4008W0A-TIB0 include data storage in digital Telephone Answering Devices(TAD) and other consumer applications that require voice data storage.