Features: · Process Technology: Full CMOS· Organization: 512Kx8· Power Supply Voltage: 4.5~5.5V· Low Data Retention Voltage: 2V(Min)· Three state output and TTL compatible· Package Type: 32-DIP-600, 32-SOP-525,32-TSOP2-400F/RPinoutSpecifications Item Symbol Ratings Unit Remark Volt...
K6X4008C1F-F: Features: · Process Technology: Full CMOS· Organization: 512Kx8· Power Supply Voltage: 4.5~5.5V· Low Data Retention Voltage: 2V(Min)· Three state output and TTL compatible· Package Type: 32-DIP-600,...
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Features: · Process Technology: Full CMOS· Organization: 512Kx8· Power Supply Voltage: 4.5~5.5V· L...
DescriptionThe K6X4008C1F-BF55 is one member of the K6X4008C1F family which is designed as the 512...
Item | Symbol | Ratings | Unit | Remark |
Voltage on any pin relative to Vss | VIN,VOUT | -0.5 to VCC+0.5V(max. 7.0V) | V | - |
Voltage on Vcc supply relative to Vss | VCC | -0.3 to 7.0 | V | - |
Power Dissipation | PD | 1.0 | W | - |
Storage temperature | TSTG | -65 to 150 | °C | - |
Operating Temperature | TA | 0 to 70 | °C | K6X4008C1F-B |
-40 to 85 |
°C |
K6X4008C1F-F | ||
-40 to 125 |
°C |
K6X4008C1F-Q |
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The K6X4008C1F-F families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The K6X4008C1F-F families supports various operating temperature range and various package types for user flexibility of system design. The K6X4008C1F-F families also support low data retention voltage for battery backup operation with low data retention current.