K6X4008C1F-BF55

The K6X4008C1F-BF55 is one member of the K6X4008C1F family which is designed as the 512Kx8 bit low power full CMOS static RAM. This K6X4008C1F-BF55 is fabricated by SAMSUNG's advanced full CMOS process technology. Also this K6X4008C1F-BF55 supports various operating temperature range and various package types for user flexibility of system design. The K6X4008C1F-BF55 families also support low data retention voltage for battery back-up operation with low data retention current.

Features of the K6X4008C1F-BF55 are:(1)Process Technology: Full CMOS;(2)Organization: 512Kx8;(3)Power Supply Voltage: 4.5 to 5.5V;(4)Low Data Retention Voltage: 2V(Min);(5)Three state output and TTL compatible;(6)Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP2-400F/R.

The absolute maximum ratings of the K6X4008C1F-BF55 can be summarized as:(1)Voltage on any pin relative to Vss: -0.5 to Vcc+0.5 V (max. 7.0 V) V;(2)Voltage on Vcc supply relative to Vss: -0.3 to 7.0 V;(3)Power Dissipation: 1.0 W;(4)Storage temperature: -65 to 150 . If you want to know more information such as the electrical characteristics about the K6X4008C1F-BF55, please download the datasheet in www.seekic.com or www.chinaicmart.com.