K6X4008

The K6X4008 is designed as one kind of 512Kx8 bit low power full CMOS static RAM which is fabricated by SAMSUNG's advanced full CMOS process technology. The K6X4008 families supports various operating temperature range and various package types for user flexibility of system design. The K6X4008 families also support low data retention voltage for battery backup operation with low data retention current.

The K6X4008 has six features. (1)Process technology: full CMOS. (2)Organization: 512Kx8. (3)Power supply voltage: 4.5 to 5.5V. (4)Low data retention voltage: 2V(min). (5)Three state output and TTL compatible. (6)Package type: 32-DIP-600, 32-SOP-525, 32-TSOP2-400F/R. Those are all the main features.

Some absolute maximum ratings of K6X4008 have been concluded into several points as follow. (1)Its voltage on any pin relative to Vss would be from -0.5V to Vcc+0.5V (max 7.0V). (2)Its voltage on Vcc supply relative to Vss would be from -0.3V to 7.0V. (3)Its power dissipation would be 1.0W. (4)Its storage temperature range would be from -65°C to 150°C. (5)Its operating temperature range would be from 0°C to 70°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of K6X4008 are concluded as follow. (1)Its input leakage current would be min -1uA and max 1uA. (2)Its output leakage current owuld be min -1uA and max 1uA. (3)Its operating power supply current would be max 5mA. (4)Its average operating current would be max 7mA. (5)Its output low voltage would be max 0.4V. (6)Its output high voltage would be min 2.4V. (7)Its standby current TTL would be max 0.4mA. (8)Its standby current CMOS would be max 20uA. And so on. At present we have not got so much information about this IC and we would try hard to get more information about this IC and we would try hard to get more information about K6X4008. If you have any question or suggestion or want to know more information please contact us for details. Thank you!