K6T4016U3C

Features:

· Process Technology: TFT
· Organization: 256K x16
· Power Supply Voltage K6T4016V3C Family: 3.0~3.6V K6T4016U3C Family: 2.7~3.3V
· Low Data Retention Voltage: 2V(Min)
· Three State Outputs
· Package Type: 44-TSOP2-400F/R


Pinout




Specifications

Item	Symbol	Ratings	Unit	Remark
Voltage on any pin relative to Vss	VIN,VOUT	-0.5 to VCC+0.5	V	-
Voltage on Vcc supply relative to Vss	VCC	-0.3 to 4.6	V	-
Power Dissipation	PD	1.0	W	-
Storage temperature	TSTG	-65 to 150	°C	-
Operating Temperature	TA	0 to 70	°C	K6T4016V3C-B, K6T4016U3C-B
		-40 to 85	°C	K6T4016V3C-F, K6T4016U3C-F

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Description

The K6T4016V3C and K6T4016U3C families are fabricated by SAMSUNG's advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.