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K6T4008U1C-B

Features: · Process Technology: TFT· Organization: 512K´8· Power Supply Voltage K6T4008V1C Family: 3.0~3.6V K6T4008U1C Family: 2.7~3.3V· Low Data Retention Voltage: 2V(Min)· Three state output and TTL Compatible· Package Type: 32-SOP-525, 32-TSOP2-400F/R 32-TSOP1-0820F, 32-TSOP1-0813.4FPinou...

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SeekIC No. : 004383208 Detail

K6T4008U1C-B: Features: · Process Technology: TFT· Organization: 512K´8· Power Supply Voltage K6T4008V1C Family: 3.0~3.6V K6T4008U1C Family: 2.7~3.3V· Low Data Retention Voltage: 2V(Min)· Three state output...

K6T4008U1C-B Data Sheet

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Part Number:
K6T4008U1C-B
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Features:

· Process Technology: TFT
· Organization: 512K´8
· Power Supply Voltage
  K6T4008V1C Family: 3.0~3.6V
  K6T4008U1C Family: 2.7~3.3V
· Low Data Retention Voltage: 2V(Min)
· Three state output and TTL Compatible
· Package Type: 32-SOP-525, 32-TSOP2-400F/R
                          32-TSOP1-0820F, 32-TSOP1-0813.4F


Pinout

Connection Diagram


Specifications

Item Symbol Ratings Unit Remark
Voltage on any pin relative to Vss VIN,VOUT -0.5 to VCC+0.5 V -
Voltage on Vcc supply relative to Vss VCC -0.3 to 4.6 V -
Power Dissipation PD 1.0 W -
Storage temperature TSTG -65 to 150 °C -
Operating Temperature TA 0 to 70 °C K6T4008V1C-L, K6T4008U1C-L
-40 to 85

°C

K6T4008V1C-P, K6T4008U1C-P

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The K6T4008V1C and K6T4008U1C families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature range and have various package type for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.




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