K6T4008C1B

Features: · Process Technology: TFT· Organization: 512Kx8· Power Supply Voltage: 4.5~5.5V· Low Data Retention Voltage: 2V(Min)· Three state output and TTL Compatible· Package Type: 32-DIP-600, 32-SOP-525 32-TSOP2-400F/RPinoutSpecifications Item Symbol Ratings Unit Remark Voltage on any...

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K6T4008C1B Picture
SeekIC No. : 004383207 Detail

K6T4008C1B: Features: · Process Technology: TFT· Organization: 512Kx8· Power Supply Voltage: 4.5~5.5V· Low Data Retention Voltage: 2V(Min)· Three state output and TTL Compatible· Package Type: 32-DIP-600, 32-SO...

floor Price/Ceiling Price

Part Number:
K6T4008C1B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/12

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Product Details

Description



Features:

· Process Technology: TFT
· Organization: 512Kx8
· Power Supply Voltage: 4.5~5.5V
· Low Data Retention Voltage: 2V(Min)
· Three state output and TTL Compatible
· Package Type: 32-DIP-600, 32-SOP-525 32-TSOP2-400F/R



Pinout

  Connection Diagram


Specifications

Item Symbol Ratings Unit Remark
Voltage on any pin relative to Vss VIN,VOUT -0.5 to 7.0 V -
Voltage on Vcc supply relative to Vss VCC -0.5 to 7.0 V -
Power Dissipation PD 1.0 W -
Storage temperature TSTG -65 to 150 °C -
Operating Temperature TA 0 to 70 °C K6T4008C1B-L/-B
-40 to 85 °C K6T4008C1B-P/-F
Soldering temperature and time TSOLDER 260°C, 10sec(Lead Only) - -
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.


Description

The K6T4008C1B families are fabricated by SAMSUNG¢s advanced CMOS process technology. The families support various operating temperature ranges and various package types for user flexibility of system design. The family also support low data retention voltage for battery back-up operation with low data retention current.




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