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K6F4016U6G

Features: · Process Technology: Full CMOS· Organization: 256K x16 bit· Power Supply Voltage: 2.7~3.3V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 48-TBGA-6.00x7.00PinoutSpecifications Item Symbol Ratings Unit Voltage on any pin relative to Vss ...

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SeekIC No. : 004383147 Detail

K6F4016U6G: Features: · Process Technology: Full CMOS· Organization: 256K x16 bit· Power Supply Voltage: 2.7~3.3V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 48-TBGA-6.00x7.00Pino...

K6F4016U6G Data Sheet

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Part Number:
K6F4016U6G
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Process Technology: Full CMOS
· Organization: 256K x16 bit
· Power Supply Voltage: 2.7~3.3V
· Low Data Retention Voltage: 1.5V(Min)
· Three State Outputs
· Package Type: 48-TBGA-6.00x7.00


Pinout

Connection Diagram


Specifications

Item
Symbol
Ratings
Unit
Voltage on any pin relative to Vss
VIN, VOUT
-0.3 to VCC+0.3V(Max. 3.6V)
V
Voltage on Vcc supply relative to Vss
VCC
-0.3 to 3.6
V
Power Dissipation
PD
1.0
W
Storage temperature
TSTG
-65 to 150
°C
Operating Temperature
TA
-40 to 85
°C


1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted within recommended operating condition. Exposure to absolute maximum rating conditions for extended period may affect reliability.



Description

The K6F4016U6G families are fabricated by SAMSUNG¢s advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The family also supports low data retention voltage for battery back-up operation with low data retention current.




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