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K6F4008U2E

Features: · Process Technology: Full CMOS· Organization: 512K x8 bit· Power Supply Voltage: 2.7~3.3V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 48(36)-TBGA-6.00x7.00Specifications Item Symbol Ratings Unit Voltage on any pin relative to Vss VIN,VOUT -0.5...

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SeekIC No. : 004383143 Detail

K6F4008U2E: Features: · Process Technology: Full CMOS· Organization: 512K x8 bit· Power Supply Voltage: 2.7~3.3V· Low Data Retention Voltage: 1.5V(Min)· Three State Outputs· Package Type: 48(36)-TBGA-6.00x7.00S...

K6F4008U2E Data Sheet

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Part Number:
K6F4008U2E
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Process Technology: Full CMOS
· Organization: 512K x8 bit
· Power Supply Voltage: 2.7~3.3V
· Low Data Retention Voltage: 1.5V(Min)
· Three State Outputs
· Package Type: 48(36)-TBGA-6.00x7.00


Specifications

Item Symbol Ratings Unit
Voltage on any pin relative to Vss VIN,VOUT -0.5 to VCC+0.3V(Max.3.6V) V
Voltage on Vcc supply relative to Vss VCC -0.3 to 3.6 V
Power Dissipation PD 1.0 W
Storage temperature TSTG -65 to 150 °C
Operating Temperature TA -40 to 85 °C

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.




Description

The K6F4008U2E families are fabricated by SAMSUNG's advanced full CMOS process technology. The families support industrial temperature range and Chip Scale Package for user flexibility of system design. The families also supports low data retention voltage for battery back-up operation with low data retention current.




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