Features: · Process Technology: Full CMOS· Organization: 256K x16 bit· Power Supply Voltage: 1.65~2.20V· Low Data Retention Voltage: 1.0V(Min)· Three State Outputs· Package Type: 48-TBGA-6.00x7.00Specifications Item Symbol Ratings Unit Voltage on any pin relative to Vss VIN,VOUT -0.5 ...
K6F4016R4E: Features: · Process Technology: Full CMOS· Organization: 256K x16 bit· Power Supply Voltage: 1.65~2.20V· Low Data Retention Voltage: 1.0V(Min)· Three State Outputs· Package Type: 48-TBGA-6.00x7.00Sp...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: · Process Technology: Full CMOS· Organization: 512K x8 bit· Power Supply Voltage: 2.7~3....
Features: · Process Technology: Full CMOS· Organization: 512K x8 bit· Power Supply Voltage: 2.7~3....
Features: · Process Technology: Full CMOS· Organization: 256K x16 bit· Power Supply Voltage: 2.7~3...
Item | Symbol | Ratings | Unit |
Voltage on any pin relative to Vss | VIN,VOUT | -0.5 to VCC+0.3V(Max. 3.6V) | V |
Voltage on Vcc supply relative to Vss | VCC | -0.3 to 2.5 | V |
Power Dissipation | PD | 1.0 | W |
Storage temperature | TSTG | -65 to 150 | °C |
Operating Temperature | TA | -40 to 85 | °C |
1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
The K6F4016R4E families are fabricated by SAMSUNG's advanced full CMOS process technology. The families support industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The families also support low data retention voltage for battery back-up operation with low data retention current.