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IXTY2N80P

MOSFET 2 Amps 800V 6 Rds

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SeekIC No. : 00154311 Detail

IXTY2N80P: MOSFET 2 Amps 800V 6 Rds

IXTY2N80P Data Sheet

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Part Number:
IXTY2N80P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 6 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-252
Drain-Source Breakdown Voltage : 800 V
Continuous Drain Current : 2 A
Resistance Drain-Source RDS (on) : 6 Ohms


Parameters:

Technical/Catalog InformationIXTY2N80P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C2A
Rds On (Max) @ Id, Vgs6 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 440pF @ 25V
Power - Max70W
PackagingTube
Gate Charge (Qg) @ Vgs10.6nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTY2N80P
IXTY2N80P



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