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IXTY01N100

MOSFET 0.1 Amps 1000V 80 Rds

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SeekIC No. : 00154332 Detail

IXTY01N100: MOSFET 0.1 Amps 1000V 80 Rds

IXTY01N100 Data Sheet

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Part Number:
IXTY01N100
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.1 A
Resistance Drain-Source RDS (on) : 80 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 0.1 A
Drain-Source Breakdown Voltage : 1000 V
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 80 Ohms


Features:

·International standard packages JEDEC TO-251 AA, TO-252 AA
·Low RDS (on) HDMOSTM process
·Rugged polysilicon gate cell structure
·Fast switching times


Application

·Level shifting
·Triggers
·Solid state relays
·Current regulators


Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR		 TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 M		 1000
1000		 V
V
VGES
VGEM		 Continuous
Transient		 ±20
±30		 V
V
ID25
IDM		 TC = 25°C
TC = 25°C, pulse width limited by TJM		 100
400		 A
A
PD TC = 25°C 25 W
TJ
TJM
Tstg		   -55 ... +150
150
-55 ... +150		 °C
°C
°C
TL 1.6 mm (0.063 in.) from case for 10 s 300 °C
Weight   0.8 g



Parameters:

Technical/Catalog InformationIXTY01N100
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C100mA
Rds On (Max) @ Id, Vgs80 mOhm @ 100mA, 10V
Input Capacitance (Ciss) @ Vds 54pF @ 25V
Power - Max25W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs6.9nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Drawing Number*
Other Names IXTY01N100
IXTY01N100



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