IXTY01N100D

MOSFET MOSFET N-CH DEPLETN 1000V 100MA TO-25

product image

IXTY01N100D Picture
SeekIC No. : 00158298 Detail

IXTY01N100D: MOSFET MOSFET N-CH DEPLETN 1000V 100MA TO-25

floor Price/Ceiling Price

Part Number:
IXTY01N100D
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.1 A
Resistance Drain-Source RDS (on) : 80000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252AA-3 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 0.1 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 80000 mOhms
Package / Case : TO-252AA-3


Features:

· Normally ON mode
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Fast switching speed



Application

· Level shifting
· Triggers
· Solid state relays
· Current regulators



Specifications

Symbol
Test Conditions
Max. Ratings
VDSX
VDGX
TJ = 25 to 150
TJ = 25 to 150
1000 V
1000 V
VGS
VGSM
Continuous
Transient
±20 V
±30 V
IDSS
IDM
TC = 25; TJ = 25 to 150
TC = 25, pulse width limited by TJ
100 mA
400 mA
PD TC = 25
T = 25
25 W
1.1 W
TVJ
TVJM
Tstg
 
-55 ... +150
150
-55 ... +150
TL
TISOL
1.6 mm (0.063 in.) from case for 10 s
Plastic case for 10 s (IXTU)
300
300
Md Mounting torque TO-220
1.3 / 10 Nm/lb.



Parameters:

Technical/Catalog InformationIXTY01N100D
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C100mA
Rds On (Max) @ Id, Vgs110 Ohm @ 50mA, 0V
Input Capacitance (Ciss) @ Vds 120pF @ 25V
Power - Max1.1W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureDepletion Mode
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTY01N100D
IXTY01N100D



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Sensors, Transducers
Potentiometers, Variable Resistors
Hardware, Fasteners, Accessories
Connectors, Interconnects
LED Products
View more