MOSFET MOSFET N-CH DEPLETN 1000V 100MA TO-25
IXTY01N100D: MOSFET MOSFET N-CH DEPLETN 1000V 100MA TO-25
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1000 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.1 A | ||
Resistance Drain-Source RDS (on) : | 80000 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252AA-3 | Packaging : | Tube |
Symbol |
Test Conditions |
Max. Ratings |
VDSX VDGX |
TJ = 25 to 150 TJ = 25 to 150 |
1000 V 1000 V |
VGS VGSM |
Continuous Transient |
±20 V ±30 V |
IDSS IDM |
TC = 25; TJ = 25 to 150 TC = 25, pulse width limited by TJ |
100 mA 400 mA |
PD | TC = 25 T = 25 |
25 W 1.1 W |
TVJ TVJM Tstg |
-55 ... +150 150 -55 ... +150 | |
TL TISOL |
1.6 mm (0.063 in.) from case for 10 s Plastic case for 10 s (IXTU) |
300 300 |
Md | Mounting torque TO-220 |
1.3 / 10 Nm/lb. |
Technical/Catalog Information | IXTY01N100D |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 1000V (1kV) |
Current - Continuous Drain (Id) @ 25° C | 100mA |
Rds On (Max) @ Id, Vgs | 110 Ohm @ 50mA, 0V |
Input Capacitance (Ciss) @ Vds | 120pF @ 25V |
Power - Max | 1.1W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | - |
Package / Case | DPak, SC-63, TO-252 (2 leads+tab) |
FET Feature | Depletion Mode |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTY01N100D IXTY01N100D |