IXTY01N100D

MOSFET MOSFET N-CH DEPLETN 1000V 100MA TO-25

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SeekIC No. : 00158298 Detail

IXTY01N100D: MOSFET MOSFET N-CH DEPLETN 1000V 100MA TO-25

floor Price/Ceiling Price

Part Number:
IXTY01N100D
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1000 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.1 A
Resistance Drain-Source RDS (on) : 80000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252AA-3 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 0.1 A
Drain-Source Breakdown Voltage : 1000 V
Resistance Drain-Source RDS (on) : 80000 mOhms
Package / Case : TO-252AA-3


Features:

· Normally ON mode
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Fast switching speed



Application

· Level shifting
· Triggers
· Solid state relays
· Current regulators



Specifications

Symbol
Test Conditions
Max. Ratings
VDSX
VDGX
TJ = 25 to 150
TJ = 25 to 150
1000 V
1000 V
VGS
VGSM
Continuous
Transient
±20 V
±30 V
IDSS
IDM
TC = 25; TJ = 25 to 150
TC = 25, pulse width limited by TJ
100 mA
400 mA
PD TC = 25
T = 25
25 W
1.1 W
TVJ
TVJM
Tstg
 
-55 ... +150
150
-55 ... +150
TL
TISOL
1.6 mm (0.063 in.) from case for 10 s
Plastic case for 10 s (IXTU)
300
300
Md Mounting torque TO-220
1.3 / 10 Nm/lb.



Parameters:

Technical/Catalog InformationIXTY01N100D
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C100mA
Rds On (Max) @ Id, Vgs110 Ohm @ 50mA, 0V
Input Capacitance (Ciss) @ Vds 120pF @ 25V
Power - Max1.1W
PackagingTube
Gate Charge (Qg) @ Vgs-
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureDepletion Mode
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTY01N100D
IXTY01N100D



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