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IXTY1R4N60P

MOSFET 1.4 Amps 600 V 8 Ohm Rds

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SeekIC No. : 00151043 Detail

IXTY1R4N60P: MOSFET 1.4 Amps 600 V 8 Ohm Rds

IXTY1R4N60P Data Sheet

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Part Number:
IXTY1R4N60P
Mfg:
Ixys
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 1.4 A
Resistance Drain-Source RDS (on) : 9 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 1.4 A
Package / Case : TO-252AA
Resistance Drain-Source RDS (on) : 9 Ohms


Parameters:

Technical/Catalog InformationIXTY1R4N60P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C1.4A
Rds On (Max) @ Id, Vgs9 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 140pF @ 25V
Power - Max50W
PackagingTube
Gate Charge (Qg) @ Vgs5.2nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTY1R4N60P
IXTY1R4N60P



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