Position: Home  > All Categories> Integrated Circuits (ICs) > IXTY1N80

IXTY1N80

MOSFET 1 Amps 800 V 11 W Rds

product image

IXTY1N80 Picture
See larger image
SeekIC No. : 00154012 Detail

IXTY1N80: MOSFET 1 Amps 800 V 11 W Rds

IXTY1N80 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IXTY1N80
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/25

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 800 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 11 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252AA Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Bulk
Drain-Source Breakdown Voltage : 800 V
Package / Case : TO-252AA
Continuous Drain Current : 1 A
Resistance Drain-Source RDS (on) : 11 Ohms


Specifications

Symbol Test Conditions Maximum Ratings
VDSS
VDGR 		TJ = 25°C to 150°CV
TJ = 25°C to 150°C; RGS = 1 M		 800
800		 V
V
VGS
VGSM 		Continuous
Transient		 ±20
±30		 V
V
ID25
IDM 		TC = 25°C
TC = 25°C, pulse width limited by TJM		 750
3		 mA
mA
IAR
EAR
EAS 		TC = 25°C
TC = 25°C
 1.0
5
100		 A
mJ
mJ
dv/dt
IS IDM, di/dt 100 A/s, VDD VDSS,
TJ 150°C, RG = 47 		3 V/ns
PD TC = 25°C 40 W
TJ
TJM 		  -55 ... +150 150
Tstg -55 ... +150 		°C
°C
°C



Parameters:

Technical/Catalog InformationIXTY1N80
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C750mA
Rds On (Max) @ Id, Vgs11 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 220pf @ 25V
Power - Max40W
PackagingBulk
Gate Charge (Qg) @ Vgs8.5nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTY1N80
IXTY1N80



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Resistors
A101G
3006P-1-205LF
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Hardware, Fasteners, Accessories
MF-A02
LMS700KF07
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
Connectors, Interconnects
ASP-134488-01
WM4078-ND
View more