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IXTY12N06T

MOSFET 12 Amps 6V

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SeekIC No. : 00150951 Detail

IXTY12N06T: MOSFET 12 Amps 6V

IXTY12N06T Data Sheet

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Part Number:
IXTY12N06T
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 12 A
Resistance Drain-Source RDS (on) : 85 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Package / Case : TO-252
Continuous Drain Current : 12 A
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 85 mOhms


Parameters:

Technical/Catalog InformationIXTY12N06T
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs85 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 256pF @ 25V
Power - Max33W
PackagingTube
Gate Charge (Qg) @ Vgs3.4nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTY12N06T
IXTY12N06T



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