IXTM13N80

Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate cell structure· Low package inductance (< 5 nH) -easy to drive and to protect· Fast switching timesApplication·Switch-mode and resonant-mode power supplies·Motor controls·Uninterruptible Power Sup...

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SeekIC No. : 004381683 Detail

IXTM13N80: Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate cell structure· Low package inductance (< 5 nH) -easy to drive and to protect· Fast switching ti...

floor Price/Ceiling Price

Part Number:
IXTM13N80
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/24

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Product Details

Description



Features:

· International standard packages
· Low RDS (on) HDMOSTM process
· Rugged polysilicon gate cell structure
· Low package inductance (< 5 nH)
    - easy to drive and to protect
· Fast switching times



Application

·Switch-mode and resonant-mode power supplies
·Motor controls
·Uninterruptible Power Supplies (UPS)
·DC choppers



Specifications

Symbol Test Conditions Maximum Ratings
VCES
VCGR
TJ = 25 to 150 600
TJ= 25 to 150 ; RGE = 1 M
800
800
V
VGES
VGEM
Transient ±20
±30
V
V
ID25
IDM
TC = 25
TC = 25, pulse width limited by TJM
11
13
44
52
A
A
PD TC = 25 300 W
TJ
TJM
Tstg
  -50 ... +150
150
-50 ... +150
°C
°C
°C
TL 1.6 mm (0.062 in.) from case for 10 s 300 °C
Md Mounting torque 1.13/10 Nm/lb.in.
Weight TO-204
TO-247
18
6
g
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300 °C



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