Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate cell structure· Low package inductance (< 5 nH) -easy to drive and to protect· Fast switching timesApplication·Switch-mode and resonant-mode power supplies·Motor controls·Uninterruptible Power Sup...
IXTM13N80: Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate cell structure· Low package inductance (< 5 nH) -easy to drive and to protect· Fast switching ti...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate ce...
Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate ce...
Symbol | Test Conditions | Maximum | Ratings |
VCES VCGR |
TJ = 25 to 150 600 TJ= 25 to 150 ; RGE = 1 M |
800 800 |
V |
VGES VGEM |
Transient | ±20 ±30 |
V V |
ID25 IDM |
TC = 25 TC = 25, pulse width limited by TJM |
11 13 44 52 |
A A |
PD | TC = 25 | 300 | W |
TJ TJM Tstg |
-50 ... +150 150 -50 ... +150 |
°C °C °C | |
TL | 1.6 mm (0.062 in.) from case for 10 s | 300 | °C |
Md | Mounting torque | 1.13/10 | Nm/lb.in. |
Weight | TO-204 TO-247 |
18 6 |
g g |
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 | °C |