Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Low package inductance (< 5 nH) - easy to drive and to protect·Fast switching timesApplication·Switch-mode and resonant-mode power supplies·Motor controls·Uninterruptible Power Supplie...
IXTM10N100: Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Low package inductance (< 5 nH) - easy to drive and to protect·Fast switching timesA...
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Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate ce...
Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate...
Symbol | Test Conditions | Maximum | Ratings |
VCES VCGR |
TJ = 25 to 150 600 TJ= 25 to 150 ; RGE = 1 M |
1000 1000 |
V |
VGES VGEM |
Transient | ±20 ±30 |
V V |
ID25 IDM |
TC = 25 TC = 25, pulse width limited by TJM |
10 12 40 48 |
AA A A A |
PD | TC = 25 | 300 | W |
TJ TJM Tstg |
-50 ... +150 150 -50 ... +150 |
°C °C °C | |
TL | 1.6 mm (0.062 in.) from case for 10 s | 300 | °C |
Md | Mounting torque | 1.13/10 | Nm/lb.in. |
Weight | TO-204 TO-247 |
18 6 |
g g |
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 | °C |