Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate cell structure· Low package inductance (< 5 nH) - easy to drive and to protect· Fast switching timesApplication· Switch-mode and resonant-mode power supplies· Motor controls· Uninterruptible Power...
IXTM12N50A: Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate cell structure· Low package inductance (< 5 nH) - easy to drive and to protect· Fast switching t...
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Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate ce...
Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate ce...
Symbol | Test Conditions | Maximum | Ratings |
VCES VCGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M |
500 500 |
V V |
VGES VGEM |
Continuous Transient |
±20 ±30 |
V |
ID25 IDM |
TC = 25°C TC = 25°C, pulse width limited by TJM |
12 48 |
A |
PD | TC = 25°C | 180 | W |
TJ TJM Tstg |
1.6 mm (0.063 in) from case for 10 s | -55 ... +150 150 -55 ... +150 |
°C °C °C |
Md | Mounting torque | 1.13/10 | Nm/lb.in. |
Weight | TO-204 TO-247 |
18 6 |
g g |
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s |
300 | °C |