IXTM12N100 Selling Leads, Price trend, IXTM12N100 DataSheet download, circuit diagram from SeekIC.com

Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Low package inductance (< 5 nH) - easy to drive and to protect·Fast switching timesApplication·Switch-mode and resonant-mode power supplies·Motor controls·Uninterruptible Power Supplie...

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SeekIC No. : 004381681 Detail

IXTM12N100: Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Low package inductance (< 5 nH) - easy to drive and to protect·Fast switching timesA...

IXTM12N100 Data Sheet

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Part Number:: IXTM12N100
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/30

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Recent History
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Features: ·International standard packages·Low RDS (on) HDMOSTM process·Rugged polysilicon gate ce...
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Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate...
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Features: · International standard packages· Low RDS (on) HDMOSTM process· Rugged polysilicon gate...

Product Details

Description

Features:

·International standard packages
·Low R_{DS (on)} HDMOS^TM process
·Rugged polysilicon gate cell structure
·Low package inductance (< 5 nH)
- easy to drive and to protect
·Fast switching times

Application

·Switch-mode and resonant-mode power supplies
·Motor controls
·Uninterruptible Power Supplies (UPS)
·DC choppers

Specifications

Symbol	Test Conditions	Maximum	Ratings
V_CESV_CGR	T_J = 25 to 150 600 T_J= 25 to 150 ; R_GE = 1 M	1000 1000	V
V_GES V_GEM	Transient	±20 ±30	V V
I_D25 I_DM	T_C = 25 T_C = 25, pulse width limited by TJM	10 12 40 48	AA A A A
P_D	T_C = 25	300	W
T_J T_JM T_stg		-50 ... +150 150 -50 ... +150	°C °C °C
T_L	1.6 mm (0.062 in.) from case for 10 s	300	°C
M_d	Mounting torque	1.13/10	Nm/lb.in.
Weight	TO-204 TO-247	18 6	g g
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s		300	°C

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IXTM12N100

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