MOSFET 8 Amps 500V 0.8 Ohm Rds
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Features: ·International standard packages·Low RDS (on)·Rated for unclamped Inductive load Switchi...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 500 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 8 A | ||
Resistance Drain-Source RDS (on) : | 0.8 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263 | Packaging : | Tube |
Symbol | Test Conditions | Maximum Ratings | |
VDSS VDGR |
TJ = 25 to 150 TJ = 25 to 150; RGS = 1M |
500 500 |
V V |
VGES VGEM |
Continuous Transient |
±30 ±40 |
V V |
ID25 IDM |
TC = 25 TC = 25pulse width limited by TJM |
8 14 |
A A |
IAR EAR EAS |
TC = 25 TC = 25 TC = 25 |
8 20 400 |
A mJ mJ |
dv/dt | IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150, RG = 18 |
10 |
V/ns |
PD | TC = 25 |
150 |
W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
| |
TL TSOLD |
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s |
300 260 |
|
Md | Mounting torque (TO-220) |
1.13/10 Nm/lb.in. | |
Weight | TO-220 TO-263 |
4 3 |
g g |
Technical/Catalog Information | IXTA8N50P |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 8A |
Rds On (Max) @ Id, Vgs | 800 mOhm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 1050pF @ 25V |
Power - Max | 150W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 20nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTA8N50P IXTA8N50P |