IXTA86N20T

MOSFET 86 Amps 200V 29 Rds

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SeekIC No. : 00151039 Detail

IXTA86N20T: MOSFET 86 Amps 200V 29 Rds

floor Price/Ceiling Price

Part Number:
IXTA86N20T
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 86 A
Resistance Drain-Source RDS (on) : 29 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Bulk    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 30 V
Packaging : Bulk
Package / Case : TO-263
Resistance Drain-Source RDS (on) : 29 mOhms
Continuous Drain Current : 86 A


Parameters:

Technical/Catalog InformationIXTA86N20T
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25° C86A
Rds On (Max) @ Id, Vgs29 mohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 4500pF @ 25V
Power - Max480W
PackagingTube
Gate Charge (Qg) @ Vgs90nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTA86N20T
IXTA86N20T



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