MOSFET 86 Amps 200V 29 Rds
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Features: ·International standard packages·Low RDS (on)·Rated for unclamped Inductive load Switchi...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 86 A | ||
Resistance Drain-Source RDS (on) : | 29 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263 | Packaging : | Bulk |
Technical/Catalog Information | IXTA86N20T |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 86A |
Rds On (Max) @ Id, Vgs | 29 mohm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 4500pF @ 25V |
Power - Max | 480W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 90nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTA86N20T IXTA86N20T |