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IXTA52P10P

MOSFET -52.0 Amps -100V 0.050 Rds

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SeekIC No. : 00151174 Detail

IXTA52P10P: MOSFET -52.0 Amps -100V 0.050 Rds

IXTA52P10P Data Sheet

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Part Number:
IXTA52P10P
Mfg:
Ixys
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : - 100 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 52 A
Resistance Drain-Source RDS (on) : 0.05 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-263 Packaging : Tube    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-263
Continuous Drain Current : 52 A
Resistance Drain-Source RDS (on) : 0.05 Ohms
Drain-Source Breakdown Voltage : - 100 V


Parameters:

Technical/Catalog InformationIXTA52P10P
VendorIXYS
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C52A
Rds On (Max) @ Id, Vgs50 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 2845pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs60nC @ 10V
Package / CaseD²Pak, TO-263 (2 leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names IXTA52P10P
IXTA52P10P



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