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SeekIC No. : 00151174 Detail

IXTA52P10P: MOSFET -52.0 Amps -100V 0.050 Rds

IXTA52P10P Data Sheet

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Part Number:: IXTA52P10P
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/12/25

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Product Details

Quick Details

Transistor Polarity :	P-Channel	Drain-Source Breakdown Voltage :	- 100 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	52 A
Resistance Drain-Source RDS (on) :	0.05 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-263	Packaging :	Tube

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-263
Continuous Drain Current : 52 A
Resistance Drain-Source RDS (on) : 0.05 Ohms
Drain-Source Breakdown Voltage : - 100 V

Parameters:

Technical/Catalog Information	IXTA52P10P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	P-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	52A
Rds On (Max) @ Id, Vgs	50 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	2845pF @ 25V
Power - Max	300W
Packaging	Tube
Gate Charge (Qg) @ Vgs	60nC @ 10V
Package / Case	D²Pak, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA52P10P IXTA52P10P

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IXTA52P10P

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