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IXTA4N80P: MOSFET 3.5 Amps 800V 3 Rds

IXTA4N80P Data Sheet

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Part Number:: IXTA4N80P
Mfg:: Ixys
Supply Ability:: 5000

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Upload time: 2024/12/25

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Product Details

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Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	800 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	3.5 A
Resistance Drain-Source RDS (on) :	3 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	TO-263	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 30 V
Package / Case : TO-263
Continuous Drain Current : 3.5 A
Drain-Source Breakdown Voltage : 800 V
Resistance Drain-Source RDS (on) : 3 Ohms

Parameters:

Technical/Catalog Information	IXTA4N80P
Vendor	IXYS
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25° C	3.6A
Rds On (Max) @ Id, Vgs	3.4 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	750pF @ 25V
Power - Max	100W
Packaging	Tube
Gate Charge (Qg) @ Vgs	14.2nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA4N80P IXTA4N80P

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IXTA4N80P

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