IXTA3N120TRL

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Packaging: Tape & Reel (TR)Alternate Packaging
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 3A
Gate Charge (Qg) @ Vgs: 42nC @ 10V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Vgs(th) (Max) @ Id: 5V @ 250µA
Power - Max: 200W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Manufacturer: IXYS
Input Capacitance (Ciss) @ Vds: 1350pF @ 25V
Supplier Device Package: TO-263
Rds On (Max) @ Id, Vgs: 4.5 Ohm @ 500mA, 10V


Parameters:

Technical/Catalog Information	IXTA3N120TRL
Vendor	IXYS (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C	3A
Rds On (Max) @ Id, Vgs	4.5 Ohm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	1350pF @ 25V
Power - Max	200W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	42nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	IXTA3N120TRL IXTA3N120TRL IXTA3N120DKR ND IXTA3N120DKRND IXTA3N120DKR