MOSFET 3 Amps 1100V 4 Rds
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Features: ·International standard packages·Low RDS (on)·Rated for unclamped Inductive load Switchi...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 1100 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 3 A | ||
Resistance Drain-Source RDS (on) : | 4 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-263 | Packaging : | Tube |
Symbol | Test Conditions | Maximum | Ratings |
VCES VCGR |
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 M |
3N120 1200 3N110 1100 3N120 1200 3N110 1100 |
V V |
VGES VGEM |
Continuous Transient |
±20 ±30 |
V V |
ID25 IDM IAR |
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C |
3 12 3 |
A A A |
EAR EAS |
TC = 25°C | 20 700 |
mJ mJ |
dv/dt | IS IDM, di/dt 100 A/µs, VDD VDSS, TJ 150°C, RG = 2 Ω |
5 | V/ns |
PD | TC = 25°C | 25 | W |
TJ TJM Tstg |
-55 ... +150 150 -55 ... +150 |
°C °C °C | |
TL | 1.6 mm (0.063 in.) from case for 10 s | 300 | °C |
Md | Mounting torque (TO-220) | 1.13/10 | Nm/lb.in. |
Weight | TO-220 TO-263 |
4 2 |
g g |
Technical/Catalog Information | IXTA3N110 |
Vendor | IXYS |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 1100V (1.1kV) |
Current - Continuous Drain (Id) @ 25° C | 3A |
Rds On (Max) @ Id, Vgs | 4.5 Ohm @ 500mA, 10V |
Input Capacitance (Ciss) @ Vds | 1350pF @ 25V |
Power - Max | 200W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 42nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | IXTA3N110 IXTA3N110 |